US 12,424,482 B2
Selective implantation into STI of ETSOI device
Qintao Zhang, Mt Kisco, NY (US); and Wei Zou, Lexington, MA (US)
Assigned to Applied Materials, Inc.
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 12, 2022, as Appl. No. 18/079,817.
Prior Publication US 2024/0194518 A1, Jun. 13, 2024
Int. Cl. H01L 21/762 (2006.01); H01L 21/3115 (2006.01); H10D 30/69 (2025.01)
CPC H01L 21/76224 (2013.01) [H01L 21/31155 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a device stack comprising a buried oxide (BOX) layer in a substrate;
patterning a hardmask over the substrate;
forming a plurality of isolation regions in the device stack, wherein the plurality of isolation regions extend through the BOX layer and the substrate;
forming a well mask over the device stack, wherein an opening through the well mask exposes a first isolation region of the plurality of isolation regions; and
modifying a stress of a material of the first isolation region by implanting the hardmask and the first isolation region of the plurality of isolation regions.