US 12,424,470 B2
Systems and methods for autonomous process control and optimization of semiconductor equipment using light interferometry and reflectometry
Hossein Sadeghi, San Jose, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Appl. No. 17/762,777
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
PCT Filed Sep. 21, 2020, PCT No. PCT/US2020/051726
§ 371(c)(1), (2) Date Mar. 23, 2022,
PCT Pub. No. WO2021/061541, PCT Pub. Date Apr. 1, 2021.
Claims priority of provisional application 62/905,738, filed on Sep. 25, 2019.
Prior Publication US 2022/0344184 A1, Oct. 27, 2022
Int. Cl. H01L 21/67 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/67276 (2013.01) [H01J 37/32642 (2013.01); H01L 21/67253 (2013.01); H01L 21/68721 (2013.01); C23C 16/52 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing system comprising:
a laser sensor arranged in the substrate processing system, wherein the laser sensor is configured to:
capture first data and second data from a component used in a processing chamber of the substrate processing system at first and second times, respectively;
wherein the component includes at least one of a semiconductor substrate and an edge coupling ring used with the semiconductor substrate;
wherein the component is used in the processing chamber during a process performed in the processing chamber between the first and second times; and
a controller configured to:
receive the first data and the second data from the laser sensor;
measure a change in a geometric parameter of the component based on the first data and the second data;
transmit the measured change to a remote server via a network, wherein the remote server includes a model trained to recommend an adjustment to a parameter of at least one of the process and the processing chamber based on the measured change;
receive the adjustment to the parameter from the remote server via the network; and
initially adjust the parameter of the processing chamber and then adjust the parameter of the process, or initially adjust the parameter of the processing chamber and then adjust the parameter of the process.