US 12,424,469 B2
Process monitor and process monitoring method
Teppei Tanaka, Yokosuka (JP)
Assigned to SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo (JP)
Filed by SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo (JP)
Filed on Sep. 17, 2022, as Appl. No. 17/933,095.
Application 17/933,095 is a continuation of application No. PCT/JP2021/007107, filed on Feb. 25, 2021.
Claims priority of application No. 2020-052662 (JP), filed on Mar. 24, 2020.
Prior Publication US 2023/0011199 A1, Jan. 12, 2023
Int. Cl. H01L 21/67 (2006.01); G01J 5/00 (2022.01)
CPC H01L 21/67253 (2013.01) [G01J 5/00 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A process monitor comprising:
a photodetector includes a plurality of light receiving units configured to separately measure intensities of radiant light from a semiconductor member being annealed, in a plurality of wavelength ranges that are different from each other; and
a processing device configured to obtain a physical quantity related to the semiconductor member that changes due to annealing by a laser beam, based on the intensities in the plurality of wavelength ranges measured by the photodetector;
a beam spot of the laser beam on a surface of the semiconductor member has a long shape that is elongated in one direction,
an imaging optical system including two lenses that forms an image of the beam spot;
the plurality of light receiving units are disposed at different positions in a longitudinal direction of the image of the beam spot; and
one light receiving unit of the plurality of light receiving units detects the radiant light emitted from a region shallower than a depth D1 and another light receiving unit of the plurality of light receiving units detects the radiant light emitted from a region shallower than a depth D2 wherein D2<D1.