US 12,424,463 B2
Method of processing substrate, method of manufacturing semiconductor device, substrate processing system, and recording medium
Kimihiko Nakatani, Toyama (JP); Takayuki Waseda, Toyama (JP); Shoma Miyata, Toyama (JP); and Yoshitomo Hashimoto, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Jun. 29, 2022, as Appl. No. 17/853,341.
Claims priority of application No. 2021-149710 (JP), filed on Sep. 14, 2021.
Prior Publication US 2023/0079925 A1, Mar. 16, 2023
Int. Cl. H01L 21/67 (2006.01); H01L 21/324 (2006.01)
CPC H01L 21/67109 (2013.01) [H01L 21/324 (2013.01); H01L 21/3247 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) forming a film on the substrate by exposing the substrate to a film-forming agent under a first temperature;
(b) heat-treating the film under a second temperature higher than the first temperature;
(c) altering the heat-treated film by exposing the heat-treated film to an altering agent; and
(d) removing the altered film by exposing the altered film to a removing agent,
wherein the film formed on the substrate in (a) contains carbon, and
wherein in (c), the heat-treated film is oxidized to remove carbon in the film or reduce a carbon concentration in the film.