| CPC H01L 21/67051 (2013.01) [B05B 7/0416 (2013.01); H01L 21/02057 (2013.01); H01L 21/6708 (2013.01); H01L 21/67248 (2013.01); H01L 21/68764 (2013.01)] | 19 Claims |

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1. A substrate processing apparatus, comprising:
a substrate holding unit that holds a substrate to be rotatable;
a fluid supplying unit that supplies fluid including pressurized vapor or mist of deionized water;
a processing-liquid supplying unit that supplies processing liquid including at least sulfuric acid;
a nozzle that is connected to the fluid supplying unit and the processing-liquid supplying unit to discharge mixed fluid of the fluid and the processing liquid toward the substrate;
a fluid amount adjusting unit that adjusts a flow volume of the fluid that is flowing through the fluid supplying unit; and
a controller that controls the fluid amount adjusting unit to adjust a ratio of the fluid to the processing liquid, wherein
the nozzle includes a long nozzle that extends along a horizontal direction,
the substrate processing apparatus further comprises a second nozzle in addition to the long nozzle, and
the controller is further configured to:
prior to a mixed fluid supplying process for supplying the mixed fluid to the substrate from the nozzle, execute a liquid-film forming process for supplying deionized water to the substrate from the second nozzle to form a liquid film of the deionized water on a surface of the substrate, and then supply the vapor or the mist from the nozzle to the substrate on which the liquid film is formed to execute a heating process for heating the nozzle.
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