US 12,424,458 B2
Manufacturing method of package structure of electronic device
Cheng-Chi Wang, Miao-Li County (TW); Chien-Feng Li, Miao-Li County (TW); and Kuang-Ming Fan, Miao-Li County (TW)
Assigned to Innolux Corporation, Miaoli County (TW)
Filed by Innolux Corporation, Miao-Li County (TW)
Filed on May 23, 2022, as Appl. No. 17/751,643.
Claims priority of application No. 202210082626.6 (CN), filed on Jan. 24, 2022.
Prior Publication US 2023/0238252 A1, Jul. 27, 2023
Int. Cl. H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01)
CPC H01L 21/568 (2013.01) [H01L 24/19 (2013.01); H01L 23/293 (2013.01); H01L 23/3107 (2013.01); H01L 2221/68304 (2013.01); H01L 2221/68318 (2013.01); H01L 2924/3511 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A manufacturing method of a package structure of an electronic device, comprising:
providing a carrier plate, wherein the carrier plate comprises a composite structure and has a first surface and a second surface opposite to each other;
forming an anti-warpage structure on the first surface of the carrier plate to make the carrier plate have a first warpage direction; and
forming a redistribution structure on the second surface of the carrier plate to make the carrier plate has a second warpage direction opposite to the first warpage direction,
wherein the carrier plate comprises a first substrate, a second substrate, and an adhesive layer, wherein the first substrate and the second substrate are bonded to each other through the adhesive layer,
wherein a coefficient of thermal expansion of the anti-warpage structure is greater than or equal to 30 ppm/K and less than or equal to 180 ppm/K, and a coefficient of thermal expansion of the first substrate and a coefficient of thermal expansion of the second substrate are greater than or equal to 3 ppm/K and less than or equal to 12 ppm/K.