| CPC H01L 21/324 (2013.01) [H01L 21/2007 (2013.01); H01L 21/6835 (2013.01)] | 8 Claims |

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1. A method of deflecting a platen comprising:
providing a first layer formed of a material having a first coefficient of thermal expansion (CTE);
providing a second layer formed of a material having a second CTE bonded to, and in directed contact with, the first layer, the second layer including a plurality of electrodes embedded therein for facilitating electrostatic clamping of wafers to the second layer, wherein the second CTE is different than the first CTE; and
activating a heat trace disposed between the first layer and the second layer to heat the first layer and the second layer to a temperature in a range of 200 degrees Celsius to 600 degrees Celsius, wherein the heat trace is disposed entirely between, and is in direct contact with, the first layer and the second layer.
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