US 12,424,449 B2
CMP system and method of use
Te-Chien Hou, Kaohsiung (TW); Yu-Ting Yen, Kaohsiung (TW); Cheng-Yu Kuo, Zhudong Township (TW); Chih Hung Chen, Hsinchu (TW); William Weilun Hong, Hsinchu (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 10, 2024, as Appl. No. 18/631,589.
Application 17/372,705 is a division of application No. 16/515,938, filed on Jul. 18, 2019, granted, now 11,069,533, issued on Jul. 20, 2021.
Application 18/631,589 is a continuation of application No. 17/372,705, filed on Jul. 12, 2021, granted, now 11,984,323.
Prior Publication US 2024/0274440 A1, Aug. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/3105 (2006.01); B24B 37/04 (2012.01); B24B 37/20 (2012.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H10D 64/01 (2025.01); B24B 7/04 (2006.01); B24B 29/00 (2006.01); C02F 1/469 (2023.01)
CPC H01L 21/31053 (2013.01) [B24B 37/042 (2013.01); B24B 37/044 (2013.01); B24B 37/20 (2013.01); H01L 21/02065 (2013.01); H01L 21/31055 (2013.01); H01L 21/67046 (2013.01); H01L 21/67092 (2013.01); H10D 64/017 (2025.01); B24B 7/04 (2013.01); B24B 29/00 (2013.01); C02F 1/4691 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a planarization device comprising a first platen and a first nozzle, the first nozzle being configured to flow a first solution onto the first platen;
a cleaning device comprising a second nozzle and one or more wafer holders, the second nozzle being configured to flow a second solution; and
a capacitive deionization device disposed on a surface of a polishing pad of the first platen, the capacitive deionization device being configured to remove ions from the first solution.