US 12,424,446 B2
Silicon (Si) dry etch for die-to-wafer thinning
Guan Huei See, Singapore (SG); ChangBum Yong, Singapore (SG); Prayudi Lianto, Singapore (SG); Cheng Sun, Singapore (SG); and Arvind Sundarrajan, Singapore (SG)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 21, 2022, as Appl. No. 18/086,150.
Prior Publication US 2024/0213028 A1, Jun. 27, 2024
Int. Cl. H01L 21/3065 (2006.01)
CPC H01L 21/3065 (2013.01) 18 Claims
OG exemplary drawing
 
1. A method of thinning a die engaged with a substrate, comprising:
dry etching a top surface of the die with a plasma comprising fluorine to selectively remove the top surface of the die relative to a top surface of the substrate, wherein the top surface of the die is removed at a rate of greater than or equal to about 1.5 μm/min.