US 12,424,445 B2
Method for multi-level etch, semiconductor sensing device, and method for manufacturing semiconductor sensing device
Cheng-Che Lee, Zhubei (TW); and Lin-Chien Chen, Zhubei (TW)
Assigned to Helios Bioelectronics Inc., Zhubei (TW)
Filed by Helios Bioelectronics Inc., Zhubei (TW)
Filed on Feb. 7, 2022, as Appl. No. 17/665,648.
Application 17/665,648 is a division of application No. 16/736,475, filed on Jan. 7, 2020, granted, now 11,289,336.
Claims priority of provisional application 62/794,130, filed on Jan. 18, 2019.
Prior Publication US 2022/0157611 A1, May 19, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H10D 62/10 (2025.01)
CPC H01L 21/30604 (2013.01) [H01L 21/02603 (2013.01); H01L 21/265 (2013.01); H01L 21/308 (2013.01); H01L 21/31144 (2013.01); H10D 62/119 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor sensing device, comprising:
a substrate having a sensing region, the sensing region comprising:
an active feature, comprising:
an anchor portion on a top surface of the substrate;
an elevated portion spaced from the top surface of the substrate by a vertical distance and connected to the anchor portion; and
a nanowire portion on the top surface of the substrate and connected to the anchor portion;
wherein the vertical distance is greater than or equal to a thickness of the nanowire portion, and the active feature comprises a core portion and a cap portion covering the core portion, the cap portion being composed of materials substantially identical to that of the nanowire portion.
 
10. A semiconductor sensing device, comprising:
a substrate having a sensing region, the sensing region comprising:
a nanowire portion on a top surface of the substrate; and
a first cap portion connected to the nanowire portion,
wherein the nanowire portion comprises a continuous region and a broken region, and the broken region is spaced apart from the continuous region by the first cap portion, and a conductivity type of a dopant in the first cap portion is different from a conductivity type of a dopant in the nanowire portion.
 
17. A semiconductor sensing device, comprising:
a substrate;
an anchor portion extended over a top surface of the substrate;
a reference feature adjacent to the anchor portion, wherein a cap portion of the reference feature comprises a compartment having a curved sidewall;
an elevated portion spaced from the top surface of the substrate by a vertical distance and connected to the anchor portion; and
two nanowires parallel to a primary direction of the elevated portion from a top view perspective.