US 12,424,441 B2
Chemical-resistant protective film
Yuto Hashimoto, Toyama (JP); Tokio Nishita, Toyama (JP); and Yuki Endo, Toyama (JP)
Assigned to NISSAN CHEMICAL CORPORATION, Tokyo (JP)
Appl. No. 17/908,167
Filed by NISSAN CHEMICAL CORPORATION, Tokyo (JP)
PCT Filed Mar. 29, 2021, PCT No. PCT/JP2021/013164
§ 371(c)(1), (2) Date Aug. 30, 2022,
PCT Pub. No. WO2021/200769, PCT Pub. Date Oct. 7, 2021.
Claims priority of application No. 2020-060092 (JP), filed on Mar. 30, 2020.
Prior Publication US 2023/0114358 A1, Apr. 13, 2023
Int. Cl. H01L 21/027 (2006.01); C09D 163/04 (2006.01); G03F 7/09 (2006.01)
CPC H01L 21/0271 (2013.01) [C09D 163/04 (2013.01); G03F 7/094 (2013.01)] 8 Claims
 
1. A protective film-forming composition to a wet etching liquid for semiconductor, comprising
a polymer consisting of a unit structure represented by formula (1-1):

OG Complex Work Unit Chemistry
wherein, Ar represents a benzene ring, a naphthalene ring or anthracene ring; R1 represents a hydroxy group, a mercapto group which may be protected by a methyl group, an amino group which may be protected by a methyl group, a halogeno group or an alkyl group having 1 to 10 carbon atoms which may be substituted or interrupted by a heteroatom or substituted by a hydroxy group; n1 represents an integer of 0 to 3; n2 represents 1 or 2; L1 represents a single bond or an alkylene group of 1 to 10 carbon atoms; E represents an epoxy group; when n2=1, T1 represents a single bond or an alkylene group of 1 to 10 carbon atoms which may be interrupted by an ether bond, ester bond or amide bond; and when n2=2, T1 represents a nitrogen atom or amide bond,
a thermal polymerization initiator, and
a solvent.