US 12,424,439 B2
Method of depositing atomic layer and method of manufacturing semiconductor device
Hyunjun Ahn, Suwon-si (KR); Hongtaek Lim, Suwon-si (KR); Kyoungwoo Hong, Suwon-si (KR); Hanhim Kang, Suwon-si (KR); and Yeongyeop Song, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 1, 2023, as Appl. No. 18/176,692.
Claims priority of application No. 10-2022-0079263 (KR), filed on Jun. 28, 2022.
Prior Publication US 2023/0420248 A1, Dec. 28, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02208 (2013.01); H01L 21/28506 (2013.01); H01L 21/32051 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of depositing an atomic layer of a metal-containing film, the method comprising:
a plurality of deposition cycles, each of the plurality of deposition cycles including,
adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber,
treating a wafer on which the hydrogen-containing compound is adsorbed with hydrogen (H2) gas, and
providing a metal precursor to the wafer to react with the hydrogen-containing compound to form the metal-containing film.