US 12,424,434 B2
Composite substrate and production method therefor
Shoji Akiyama, Annaka (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Appl. No. 17/906,733
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
PCT Filed Apr. 1, 2021, PCT No. PCT/JP2021/014152
§ 371(c)(1), (2) Date Sep. 19, 2022,
PCT Pub. No. WO2021/201220, PCT Pub. Date Oct. 7, 2021.
Claims priority of application No. 2020-067930 (JP), filed on Apr. 3, 2020.
Prior Publication US 2023/0207307 A1, Jun. 29, 2023
Int. Cl. H01L 21/02 (2006.01); C30B 29/30 (2006.01); H01L 21/225 (2006.01); H01L 21/304 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01)
CPC H01L 21/02123 (2013.01) [H01L 21/02255 (2013.01); H01L 21/02439 (2013.01); H01L 21/2253 (2013.01); H01L 21/304 (2013.01); H01L 21/76262 (2013.01); H01L 24/05 (2013.01); C30B 29/30 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2924/1068 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method for producing a composite substrate having a silicon wafer, an interlayer, and an oxide single-crystal thin film stacked in the order listed, comprising the steps of:
forming the interlayer on a surface of the silicon wafer;
subjecting a side of the interlayer of the silicon wafer to ion implantation treatment and then to thermal treatment at a temperature of 400° C. to 600° C. to form a damaged layer in a portion of the silicon wafer on the side of the interlayer;
bonding the silicon wafer and an oxide single-crystal wafer to each other with the interlayer therebetween to obtain a laminate; and
thinning the oxide single-crystal wafer of the laminate into the oxide crystal thin film,
wherein ion species to be implanted by the ion implantation treatment are hydrogen atom ions (H+) at a dose between 2.5×1016 and 5.0×1016 atoms/cm2 or hydrogen molecule ions (H2+) at a dose between 1.25×1016 and 2.5×1016 atoms/cm2.