| CPC H01J 37/32834 (2013.01) [C23C 16/45591 (2013.01); C23C 16/505 (2013.01); H01J 37/3211 (2013.01); H01J 37/3244 (2013.01); H01J 37/32458 (2013.01); H01J 37/32669 (2013.01); H01L 21/02274 (2013.01); H01J 2237/18 (2013.01); H01J 2237/3321 (2013.01)] | 19 Claims |

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1. A plasma processing apparatus, comprising:
a chamber having an upper wall and a lower wall, the upper wall having a plurality of through holes formed therein and the lower wall having an exhaust hole formed therein, wherein the chamber defines a plasma processing space between the upper wall and the lower wall;
a substrate stage disposed within the chamber, the substrate stage having a seating surface, wherein a substrate is seated on the seating surface;
a baffle plate disposed between the upper wall and the substrate stage, the baffle plate having a plurality of gas distribution holes formed therein;
a gas supply configured to supply gas into the chamber through at least one of the through holes formed in the upper wall;
a pumping device including an exhaust pipe, the exhaust pipe connected to the exhaust hole to control pressure inside the chamber; and
a plasma generator configured to generate a first plasma using the gas supplied into the chamber through at least one of the through holes formed in the upper wall,
wherein a value of an area of an outlet end portion of the exhaust pipe is the same as a value of a total area of the gas distribution holes of the baffle plate.
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