US 12,424,363 B2
Magnetic thin film laminated structure and micro-inductive device thereof
Yujie Yang, Beijing (CN); Peijun Ding, Beijing (CN); Tongwen Zhang, Beijing (CN); Wei Xia, Beijing (CN); and Hougong Wang, Beijing (CN)
Assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Filed by BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Filed on May 26, 2023, as Appl. No. 18/324,705.
Application 18/324,705 is a division of application No. 16/386,750, filed on Apr. 17, 2019, granted, now 11,699,541.
Application 16/386,750 is a continuation of application No. PCT/CN2017/107630, filed on Oct. 25, 2017.
Claims priority of application No. 201610929057.9 (CN), filed on Oct. 31, 2016.
Prior Publication US 2023/0298789 A1, Sep. 21, 2023
Int. Cl. H01F 3/02 (2006.01); H01F 10/14 (2006.01); H01F 10/30 (2006.01); H01F 17/04 (2006.01); H01F 27/26 (2006.01); H01F 41/02 (2006.01); H01F 41/14 (2006.01); H01F 41/18 (2006.01); H01F 41/32 (2006.01)
CPC H01F 3/02 (2013.01) [H01F 10/30 (2013.01); H01F 17/04 (2013.01); H01F 27/263 (2013.01); H01F 41/0206 (2013.01); H01F 41/14 (2013.01); H01F 41/18 (2013.01); H01F 41/32 (2013.01); H01F 10/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A magnetic thin film laminated structure comprising:
a first layer structure, wherein;
the first layer structure includes a first adhesive layer coupled to a workpiece by sputtering deposited process;
the adhesive layer comprises a material having compressive stress which is chosen from at least one of a Ta film, a TaN film, or a TiN film; and
at least a first pair of layers coupled to the adhesive layer by sputtering deposited process, wherein the at least a first pair of layers comprises a magnetic film layer and an isolation layer, and a first additional magnetic film layer coupled to the at least a first pair of layers by sputtering deposited process; and
a second layer structure, wherein:
the second layer structure coupled on the first layer structure by sputtering deposited process, wherein, the second layer structure comprises a second adhesive layer coupled on the first additional magnetic film layer by sputtering deposited process;
wherein the second adhesive layer comprises a material having compressive stress which is chosen from at least one of a Ta film, a TaN film, or a TiN film; and
at least a second pair of layers coupled on the second adhesive layer by sputtering deposited process, each of the at least a second pair of layers comprises a magnetic film layer and an isolation layer, and a second additional magnetic film layer coupled on the at least a second pair of layers by sputtering deposited process.