US 12,424,294 B2
One-time programmable (ROTP) NVM
Yoav Yogev, Mazkeret-Batia (IL); Amichai Givant, Rosh-HaAin (IL); Yair Sofer, Tel-Aviv (IL); and Yi He, Fremont, CA (US)
Assigned to Infineon Technologies LLC, San Jose, CA (US)
Filed by Infineon Technologies LLC, San Jose, CA (US)
Filed on Sep. 30, 2022, as Appl. No. 17/937,012.
Claims priority of provisional application 63/349,227, filed on Jun. 6, 2022.
Prior Publication US 2023/0395171 A1, Dec. 7, 2023
Int. Cl. G11C 17/18 (2006.01); G11C 17/16 (2006.01); G11C 29/34 (2006.01)
CPC G11C 17/18 (2013.01) [G11C 17/16 (2013.01); G11C 29/34 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method comprising:
receiving a first program bit address, the first program bit address associated with a first plurality of redundant bit addresses, wherein the first program bit address is associated with a first transistor-based memory cell, and wherein the first plurality of redundant bit addresses are each associated with a respective transistor-based memory cell;
providing a programing pulse to a first word line coupled to the first transistor-based memory cell to write a first write value to the first transistor-based memory cell;
reading a first bit value from the first transistor-based memory cell via a first bit line;
reading redundant bit values from transistor-based memory cells associated with the first plurality of redundant bit addresses via respective bit lines;
when one of the first bit value and the redundant bit values does not match the first write value, determining a majority bit value based on the first bit value and on the redundant bit values read from the transistor-based memory cells associated with the first plurality of redundant bit addresses; and
when the majority bit value does not match the first write value, asserting a flag signal indicative of a failed programing of the first program bit address to the first write value.