US 12,424,293 B2
One-time programmable memory devices and methods
Deniz Bozdag, Sunnyvale, CA (US); Juan P. Saenz, Menlo Park, CA (US); Dimitri Houssameddine, Sunnyvale, CA (US); and Mark Lin, Santa Clara, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by Sandisk Technologies, Inc., Milpitas, CA (US)
Filed on Jul. 19, 2023, as Appl. No. 18/355,357.
Claims priority of provisional application 63/491,766, filed on Mar. 23, 2023.
Prior Publication US 2024/0321371 A1, Sep. 26, 2024
Int. Cl. G11C 17/00 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); H10B 20/25 (2023.01)
CPC G11C 17/165 (2013.01) [G11C 17/18 (2013.01); H10B 20/25 (2023.02)] 19 Claims
OG exemplary drawing
 
11. An apparatus comprising:
a cross-point memory array comprising a plurality of memory cells, each memory cell comprising a magnetic tunnel junction memory element coupled in series with a selector element, wherein each selector element comprises a first resistance and each magnetic tunnel junction memory element is configured to reversibly switch between a second resistance and a third resistance;
wherein each memory cell in the cross-point memory array may be selectively configured as either a re-writeable memory cell or a one-time programmable memory cell,
wherein each memory cell configured as a one-time programmable memory cell functions regardless of whether the magnetic tunnel junction memory element has the second resistance, the third resistance, or is electrically shorted.