US 12,424,290 B2
Non-volatile memory including judgment memory cell strings and operating method thereof
Yu-Cheng Chen, Taichung (TW); and Chieh-Yen Wang, Taichung (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Nov. 23, 2023, as Appl. No. 18/518,444.
Claims priority of application No. 111150627 (TW), filed on Dec. 29, 2022.
Prior Publication US 2024/0221847 A1, Jul. 4, 2024
Int. Cl. G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01)
CPC G11C 16/3445 (2013.01) [G11C 16/102 (2013.01); G11C 16/14 (2013.01); G11C 16/3459 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A non-volatile memory, comprising:
a memory array, comprising a plurality of blocks, wherein each of the blocks comprises a plurality of main memory cell strings, a first judgment memory cell string, and a second judgment memory cell string, each of the main memory cell strings comprises a plurality of main memory cells connected in series, the first judgment memory cell string comprises a plurality of first judgment memory cells connected in series, and the second judgment memory cell string comprises a plurality of second judgment memory cells connected in series; and
a controller, coupled to the memory array, wherein during a programming operation, the controller is configured to determine a data level of the corresponding first judgment memory cell according to a data level of each of the main memory cells, and determine a data level of the corresponding second judgment memory cell according to data levels of each of the first judgment memory cells and a respective previous first judgment memory cell,
wherein during an erasing operation, the controller is configured to determine whether to perform a pre-programming operation according to data levels of the second judgment memory cells.