US 12,424,289 B2
Method of operating memory device and memory device performing the same
Chihyun Kim, Suwon-si (KR); Junehong Park, Suwon-si (KR); Jayang Yoon, Suwon-si (KR); Chiweon Yoon, Suwon-si (KR); and Hyeongdo Choi, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 12, 2023, as Appl. No. 18/465,541.
Claims priority of application No. 10-2022-0188874 (KR), filed on Dec. 29, 2022.
Prior Publication US 2024/0221846 A1, Jul. 4, 2024
Int. Cl. G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3427 (2013.01) [G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3459 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a memory device including a memory block connected to a plurality of wordlines, the method comprising:
performing a first operation on the memory block by applying first driving voltages to the plurality of wordlines;
after the first operation is completed, performing a first recovery operation in which the first driving voltages applied to the plurality of wordlines are discharged; and
after the first recovery operation is completed, performing a second operation on the memory block by applying second driving voltages to the plurality of wordlines,
wherein, in the first recovery operation, first charges among a plurality of charges stored by the first driving voltages are stored in a charge recycling memory block connected to at least one charge recycling wordline, and
wherein, in the second operation, the second driving voltages are applied to the plurality of wordlines using the first charges stored in the charge recycling memory block.