US 12,424,282 B2
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
Haoyu Li, Boise, ID (US); John D. Hopkins, Meridian, ID (US); Collin Howder, Boise, ID (US); and Adam W. Saxler, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 24, 2022, as Appl. No. 17/752,207.
Prior Publication US 2023/0386575 A1, Nov. 30, 2023
Int. Cl. G11C 16/04 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01)
CPC G11C 16/0483 (2013.01) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02)] 32 Claims
OG exemplary drawing
 
1. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a conductor tier comprising conductor material on a substrate;
forming laterally-spaced memory-block regions individually comprising a vertical stack comprising alternating first tiers and second tiers directly above the conductor tier, channel-material strings extending through the first tiers and the second tiers, material of the first tiers being of different composition from material of the second tiers;
forming conducting material in a lower of the first tiers that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier, the forming of the conducting material comprising:
forming conductively-doped semiconductive material in the lower first tier against the channel material of the individual channel-material strings, the conductively-doped semiconductive material comprising an upper portion and a lower portion having a void-space vertically there-between; and
forming intermediate material into the void-space, the intermediate material being of different composition from that of the conductively-doped semiconductive material and comprising at least one of carbon, nitrogen, oxygen, metal, and n-type doped material also comprising boron.