US 12,424,281 B2
Devices and methods for operating a memristive element
Sahitya Varma Vegesna, Jena (DE); and Heidemarie Schmidt, Dresden (DE)
Assigned to TECHIFAB GMBH, Dresden (DE)
Filed by TechIFab GmbH, Radeberg (DE)
Filed on Sep. 29, 2023, as Appl. No. 18/374,693.
Claims priority of application No. 10 2022 125 361.9 (DE), filed on Sep. 30, 2022.
Prior Publication US 2024/0120005 A1, Apr. 11, 2024
Int. Cl. G11C 11/00 (2006.01); G11C 13/00 (2006.01); H03K 19/00 (2006.01); H04L 9/08 (2006.01)
CPC G11C 13/0069 (2013.01) [G11C 13/004 (2013.01); H03K 19/0021 (2013.01); H04L 9/0869 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A device, comprising:
a memristive element; and
a write circuit configured to write the memristive element into a memristive state of a plurality of memristive states by a write operation, wherein the memristive state has a characteristic flux and/or a characteristic charge associated therewith, wherein the characteristic flux corresponds to a characteristic voltage drop over the memristive element applied for a saturation time and wherein the characteristic charge corresponds to a characteristic current through the memristive element applied for a saturation time;
wherein the write operation comprises:
causing a write voltage drop over the memristive element that is greater than the characteristic voltage drop associated with the memristive state for a total write time that is shorter than the saturation time; or
causing a write current through the memristive element that is higher than the characteristic write current associated with the memristive state for a total write time that is shorter than the saturation time.