US 12,424,280 B2
Semiconductor device, and method for operating the same
Jeong Hwan Song, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jan. 25, 2023, as Appl. No. 18/159,469.
Claims priority of application No. 10-2022-0093201 (KR), filed on Jul. 27, 2022.
Prior Publication US 2024/0038302 A1, Feb. 1, 2024
Int. Cl. G11C 29/04 (2006.01); G11C 13/00 (2006.01); G11C 29/00 (2006.01); G11C 29/50 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01)
CPC G11C 13/0064 (2013.01) [G11C 13/0033 (2013.01); G11C 13/0069 (2013.01); G11C 29/04 (2013.01); G11C 29/50008 (2013.01); G11C 29/88 (2013.01); H10B 63/20 (2023.02); H10B 63/22 (2023.02); H10B 63/24 (2023.02); H10B 63/80 (2023.02); H10B 63/84 (2023.02); H10N 70/826 (2023.02); G11C 11/1659 (2013.01); G11C 11/1677 (2013.01); G11C 11/2259 (2013.01); G11C 13/0004 (2013.01); G11C 13/003 (2013.01); G11C 2029/5006 (2013.01); G11C 2213/76 (2013.01); H10B 63/30 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a plurality of first conductive lines extending in a first direction;
a plurality of second conductive lines spaced apart from the first conductive lines and extending in a second direction intersecting the first direction;
a plurality of memory cells respectively disposed at intersection regions between the first conductive lines and the second conductive lines such that each memory cell is located between a first conductive line and a second conductive line; and
a plurality of layers respectively formed between each memory cell of the plurality of memory cells and either a corresponding first conductive line or a corresponding second conductive line,
wherein each layer of the plurality of layers includes a conductive material that is capable of generating a void to create an open circuit by electromigration when a current applied to a layer through a first conductive line corresponding to the layer and a second conductive line corresponding to the layer exceeds a threshold current and is electrically conductive when the current applied to the layer is below the threshold current.