US 12,423,505 B2
Semiconductor device with cell region
Sheng-Hsiung Chen, Hsinchu (TW); Fong-Yuan Chang, Hsinchu (TW); and Ho Che Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 30, 2023, as Appl. No. 18/161,657.
Application 18/161,657 is a continuation of application No. 17/212,775, filed on Mar. 25, 2021, granted, now 11,568,125.
Application 17/212,775 is a continuation of application No. 16/579,775, filed on Sep. 23, 2019, granted, now 10,977,418, issued on Apr. 13, 2021.
Claims priority of provisional application 62/738,934, filed on Sep. 28, 2018.
Prior Publication US 2023/0177249 A1, Jun. 8, 2023
Int. Cl. H10B 43/50 (2023.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01)
CPC G06F 30/398 (2020.01) [G06F 30/392 (2020.01); H10B 43/50 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
fins representing active regions, the fins extending in a first direction;
gate structures correspondingly over the fins and extending in a second direction perpendicular to the first direction;
the fins being configured to have a first conductivity type (F-fin) or a different second conductivity type (S-fin);
the fins being aligned along tracks and arranged in rows;
a first one of the rows (first row) having a single-row height relative to the second direction, top and bottom boundaries of the first row being aligned with corresponding ones of the tracks;
the first row including an alpha-type (α-type) cell region and a beta-type (β-type) cell region each of which has the single-row height;
the α-type cell region including a first F-fin, a first S-fin and a first gate structure,
top and bottom edges of the α-type cell region being co-track aligned correspondingly with the top and bottom boundaries of the first row and free from being overlapped by the first F-fin or the first S-fin, and
the first gate structure overlapping each of the first F-fin and the first S-fin and being free from overlapping the top and bottom edges of the α-type cell region; and
the β-type cell region including a second F-fin, a second S-fin, a third F-fin, a third S-fin and a second gate structure;
the second gate structure overlapping each of the second F-fin and the second S-fin, and further overlapping at least one of the third F-fin or the third S-fin;
a top edge of the β-type cell region being co-track aligned with the top boundary of the first row and co-track aligned with the third F-fin; and
a bottom edge of the β-type cell region being co-track aligned with the bottom boundary of the first row and co-track aligned with the third S-fin.