US 12,423,498 B2
Semiconductor device
Yu-Jen Chen, Hsinchu (TW); Ling-Sung Wang, Hsinchu (TW); I-Shan Huang, Hsinchu (TW); and Chan-yu Hung, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/361,815.
Application 18/361,815 is a division of application No. 17/815,668, filed on Jul. 28, 2022, granted, now 11,763,061.
Application 16/557,054 is a division of application No. 15/949,804, filed on Apr. 10, 2018, granted, now 10,417,369, issued on Sep. 17, 2019.
Application 17/815,668 is a continuation of application No. 16/557,054, filed on Aug. 30, 2019, granted, now 11,443,093, issued on Sep. 13, 2022.
Claims priority of provisional application 62/511,481, filed on May 26, 2017.
Prior Publication US 2023/0385508 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 30/392 (2020.01); G03F 1/36 (2012.01); G03F 1/70 (2012.01); G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 21/28 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01); G03F 1/30 (2012.01); G03F 1/32 (2012.01); G03F 7/20 (2006.01); G06F 111/20 (2020.01); G06F 119/18 (2020.01); H01L 21/027 (2006.01); H10B 10/00 (2023.01); H10D 84/03 (2025.01)
CPC G06F 30/392 (2020.01) [G03F 1/36 (2013.01); G03F 1/70 (2013.01); G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 21/28123 (2013.01); H10D 64/519 (2025.01); H10D 84/834 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01); G03F 1/30 (2013.01); G03F 1/32 (2013.01); G03F 7/2002 (2013.01); G03F 7/2037 (2013.01); G06F 2111/20 (2020.01); G06F 2119/18 (2020.01); H01L 21/0274 (2013.01); H10B 10/12 (2023.02); H10D 84/0135 (2025.01); H10D 84/0158 (2025.01); H10D 84/0172 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
first and second active regions extending in a first direction;
gate electrodes extending in a second direction perpendicular to the first direction, wherein each of the gate electrodes comprises:
a first segment over at least one of the first active region or the second active region;
a gate extension extending beyond each of the first active region and the second active region, wherein the gate extension has a uniform width in the first direction, and
a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.