US 12,422,726 B2
Method of making thin film lithium niobate electro-optical modulators
Henry H. Hung, Paradise Valley, AZ (US); Leijun Yin, Tempe, AZ (US); Xiaoyan Ying, Tempe, AZ (US); and Ke Huang, Phoenix, AZ (US)
Assigned to Optilab, LLC, Phoenix, AZ (US)
Filed by OPTILAB, LLC, Phoenix, AZ (US)
Filed on May 15, 2023, as Appl. No. 18/317,534.
Claims priority of provisional application 63/345,831, filed on May 25, 2022.
Prior Publication US 2023/0384646 A1, Nov. 30, 2023
Int. Cl. G02F 1/035 (2006.01); G02B 6/13 (2006.01); G02F 1/225 (2006.01); G02B 6/12 (2006.01)
CPC G02F 1/2255 (2013.01) [G02B 6/13 (2013.01); G02F 1/0356 (2013.01); G02B 2006/12142 (2013.01); G02F 2201/063 (2013.01); G02F 2202/20 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a lithium-niobate (LN) wafer including an optical waveguide situated within and proximate a first side of the LN wafer;
forming a bonding layer over and/or on a first side of a substrate; and
thinning the bonding layer to a first thickness,
bonding the LN wafer to the substrate such that the first side of the LN wafer faces the first side of substrate;
thinning the LN wafer; and
forming coplanar transmission lines over and/or on a second side of the LN wafer,
wherein the coplanar transmission lines extend parallel with and are laterally on either side of the optical waveguide;
wherein bonding the LN wafer to the substrate comprises attaching the LN wafer to the substrate via the thinned bonding layer, and
wherein thinning the LN wafer comprises thinning the LN wafer so that a defined total thickness is achieved for the attached LN wafer and the bonding layer.