US 12,422,716 B2
Thin film transistor substrate including slits between transparent electrodes
Do-Yeon Kim, Busan (KR); Byung-Sam Min, Goyang-si (KR); and Jong-Hyun Kim, Jeju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Jan. 8, 2024, as Appl. No. 18/406,933.
Application 18/406,933 is a division of application No. 17/377,172, filed on Jul. 15, 2021, granted, now 11,899,319.
Application 17/377,172 is a continuation of application No. 16/517,829, filed on Jul. 22, 2019, granted, now 11,092,857, issued on Aug. 17, 2021.
Application 16/517,829 is a continuation of application No. 15/373,125, filed on Dec. 8, 2016, granted, now 10,416,502, issued on Sep. 17, 2019.
Claims priority of application No. 10-2015-0177884 (KR), filed on Dec. 14, 2015.
Prior Publication US 2024/0142826 A1, May 2, 2024
Int. Cl. G02F 1/13 (2006.01); G02F 1/1337 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/80 (2023.01); G02F 1/1333 (2006.01); G02F 1/1345 (2006.01); H10H 20/833 (2025.01); H10H 20/84 (2025.01); H10K 50/814 (2023.01); H10K 50/824 (2023.01); H10K 50/828 (2023.01); H10K 50/844 (2023.01); H10K 59/123 (2023.01); H10K 59/131 (2023.01)
CPC G02F 1/134309 (2013.01) [G02F 1/133707 (2013.01); G02F 1/134363 (2013.01); G02F 1/13439 (2013.01); G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/80524 (2023.02); G02F 1/133397 (2021.01); G02F 1/134345 (2021.01); G02F 1/134372 (2021.01); G02F 1/1345 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); G09G 2300/0465 (2013.01); H10D 86/441 (2025.01); H10H 20/833 (2025.01); H10H 20/84 (2025.01); H10K 50/814 (2023.02); H10K 50/824 (2023.02); H10K 50/828 (2023.02); H10K 50/844 (2023.02); H10K 59/123 (2023.02); H10K 59/131 (2023.02); H10K 59/1315 (2023.02); H10K 59/80516 (2023.02); H10K 59/80522 (2023.02); H10K 59/873 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A display device having a thin film transistor substrate, the thin film transistor substrate comprising:
a data line;
a transparent upper electrode including a first upper electrode, at least two second upper electrodes, and a first slit disposed between the at least two second upper electrodes, wherein the first upper electrode is disposed closer to the data line than the at least two second upper electrodes; and
a transparent lower electrode including a side surface which is disposed between the data line and the first upper electrode in a width direction of the data line,
wherein the data line is disposed outside the transparent upper electrode and the transparent lower electrode.