US 12,422,308 B2
Deep temperature measuring device and deep temperature measuring method
Katsuhisa Taguchi, Tokyo (JP); and Toshiyuki Nojiri, Tokyo (JP)
Assigned to SEMITEC Corporation, Tokyo (JP)
Appl. No. 18/869,903
Filed by SEMITEC Corporation, Tokyo (JP)
PCT Filed May 9, 2023, PCT No. PCT/JP2023/017449
§ 371(c)(1), (2) Date Nov. 27, 2024,
PCT Pub. No. WO2023/228726, PCT Pub. Date Nov. 30, 2023.
Claims priority of application No. 2022-087131 (JP), filed on May 27, 2022.
Prior Publication US 2025/0172439 A1, May 29, 2025
Int. Cl. G01K 7/22 (2006.01); A61B 5/00 (2006.01); A61B 5/01 (2006.01); G01K 13/20 (2021.01)
CPC G01K 7/22 (2013.01) [A61B 5/0008 (2013.01); G01K 13/20 (2021.01); A61B 5/01 (2013.01); A61B 2562/0271 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A deep temperature measuring device comprising:
a layered structure including
a thermosensitive part that senses temperature and includes a measurement thin film thermistor capable of measuring temperature by being brought into contact with a measured object,
a control thin film thermistor disposed sandwiching a first heat-insulating layer with the measurement thin film thermistor and configured to control a temperature of a heating element layer that heats the measurement thin film thermistor so that temperatures of the heating element layer and the measurement thin film thermistor are made equal, and
a second heat-insulating layer that covers the heating element layer and the control thin film thermistor on the first heat-insulating layer,
the first heat-insulating layer and the control thin film thermistor being layered in this order on the measurement thin film thermistor,
a cover layer being provided that insulates and covers a mounting side of a circuit board on which the measurement thin film thermistor is mounted and serves as an exposed portion by not covering a mounting portion of the measurement thin film thermistor, thereby allowing the first heat-insulating layer to be layered directly on the measurement thin film thermistor without the cover layer being interposed therebetween, and
the measurement thin film thermistor and the control thin film thermistor each including a substrate, and a thin film element layer and an electrode layer formed on this substrate, the thin film element layer and the electrode layer of the measurement thin film thermistor being disposed facing a contact surface that is the measured object.