US 12,422,245 B2
Semiconductor measurement apparatus
Garam Choi, Suwon-si (KR); Wookrae Kim, Suwon-si (KR); Jinseob Kim, Suwon-si (KR); Jinyong Kim, Suwon-si (KR); Sungho Jang, Suwon-si (KR); Younguk Jin, Suwon-si (KR); and Daehoon Han, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 15, 2023, as Appl. No. 18/317,395.
Claims priority of application No. 10-2022-0138580 (KR), filed on Oct. 25, 2022.
Prior Publication US 2024/0133673 A1, Apr. 25, 2024
Prior Publication US 2024/0230314 A9, Jul. 11, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G01B 9/02 (2022.01); G01B 9/02056 (2022.01); G01B 9/02097 (2022.01)
CPC G01B 9/02044 (2013.01) [G01B 9/02058 (2013.01); G01B 9/02097 (2013.01); G01B 2210/56 (2013.01); G01B 2290/70 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor measurement apparatus, comprising:
an illumination unit including a light source and an illumination optical system, the illumination optical system in a path of light emitted from the light source;
a light receiving unit including a light-receiving optical system and an image sensor,
the light-receiving optical system in a path of light passing through the illumination optical system and reflected from a sample, and
the image sensor configured to output an original image by receiving light passing through the light-receiving optical system; and
a control unit configured to determine, by processing the original image, a selected critical dimension among critical dimensions of a structure included in a region of the sample to which light is incident;
wherein one of the illumination optical system and the light-receiving optical system includes a compensator, and an other one of the illumination optical system and the light-receiving optical system includes a plurality of beam displacers, and
wherein the control unit is configured to obtain the original image in which a peak appears due to interference while rotating the compensator, to select regions in which a peak appears in the original image and to obtain a plurality of sample images, to determine a plurality of elements included in a Mueller matrix using the plurality of sample images, and to identify the selected critical dimension based on the plurality of elements.