US 12,422,210 B2
Techniques and device structures based upon directional dielectric deposition and bottom-up fill
M. Arif Zeeshan, Manchester-by-the-sea, MA (US); Tristan Y. Ma, Lexington, MA (US); and Kelvin Chan, San Ramon, CA (US)
Assigned to Applied Materials, Inc.
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 23, 2022, as Appl. No. 17/893,559.
Application 17/893,559 is a continuation of application No. 17/072,142, filed on Oct. 16, 2020, abandoned.
Prior Publication US 2022/0404115 A1, Dec. 22, 2022
Int. Cl. F41B 3/02 (2006.01); A63F 9/02 (2006.01); H01L 21/285 (2006.01)
CPC F41B 3/02 (2013.01) [A63F 9/02 (2013.01); H01L 21/28562 (2013.01)] 19 Claims
OG exemplary drawing
 
15. A method, comprising:
providing a semiconductor device including a plurality of device structures each including a first sidewall opposite a second sidewall;
providing a seed layer over the first and second sidewall; and
forming a dielectric layer atop the seed layer, wherein the dielectric layer is formed along just a top surface of each of the plurality of device structures and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from the semiconductor device.