US 12,421,622 B2
Method for producing a monocrystalline layer of lithium niobate by transferring a seed layer of yttria-stabilized zirconia to a silicon carrier substrate and epitaxially growing the monocrystalline layer of lithium niobate and substrate for epitaxial growth of a monocrystalline layer of lithium niobate
Bruno Ghyselen, Seyssinet (FR)
Assigned to Soitec, Bernin (FR)
Filed by Soitec, Bernin (FR)
Filed on Oct. 18, 2023, as Appl. No. 18/489,345.
Application 18/489,345 is a continuation of application No. 17/042,737, granted, now 11,828,000, previously published as PCT/IB2019/000200, filed on Mar. 26, 2019.
Claims priority of application No. 1800256 (FR), filed on Mar. 28, 2018.
Prior Publication US 2024/0044043 A1, Feb. 8, 2024
Int. Cl. C30B 25/18 (2006.01); C30B 29/30 (2006.01); C30B 33/06 (2006.01); H01L 21/762 (2006.01)
CPC C30B 25/183 (2013.01) [C30B 29/30 (2013.01); C30B 33/06 (2013.01); H01L 21/76254 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A process for producing a plurality of monocrystalline layers, comprising:
transferring a plurality of monocrystalline seed layers to a carrier substrate, transferring each monocrystalline seed layer of the plurality to the carrier substrate includes joining a monocrystalline substrate to the carrier substrate, the carrier substrate comprising a silicon substrate, a plurality of coplanar thin silicon layers, and a buried layer separating the silicon substrate from the plurality of coplanar thin silicon layers, each monocrystalline seed layer of the plurality of monocrystalline seed layers arranged on a respective one of the plurality of coplanar thin silicon layers, the transferred monocrystalline seed layers arranged on the carrier substrate in the form of a plurality of tiles;
epitaxially growing a monocrystalline layer on each tile of the plurality of tiles;
partially removing portions of the plurality of coplanar thin silicon layers between the plurality of tiles exposing the buried layer in spacing between adjacent tiles of the plurality of tiles; and
etching the buried layer between the plurality of tiles after partially removing the portions of the plurality of coplanar thin silicon layers between the plurality of tiles.