US 12,421,619 B2
Method for supplementary doping of monocrystalline silicon by lowering a device comprising a containing member provided with first and second through-holes
Jiajun Chen, Tianjin (CN); Ruolin Wu, Tianjin (CN); Yonggang Nie, Tianjin (CN); and Libo Cheng, Tianjin (CN)
Assigned to TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD., Tianjin (CN)
Appl. No. 18/007,486
Filed by TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD., Tianjin (CN)
PCT Filed Nov. 25, 2022, PCT No. PCT/CN2022/134263
§ 371(c)(1), (2) Date Jan. 31, 2023,
PCT Pub. No. WO2023/098580, PCT Pub. Date Jun. 8, 2023.
Claims priority of application No. 202111448075.2 (CN), filed on Nov. 30, 2021.
Prior Publication US 2024/0271316 A1, Aug. 15, 2024
Int. Cl. C30B 15/04 (2006.01); C30B 29/06 (2006.01)
CPC C30B 15/04 (2013.01) [C30B 29/06 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method for supplementary doping of monocrystalline silicon, comprising:
lowering a device for supplementary doping of monocrystalline silicon,
wherein the device for supplementary doping of monocrystalline silicon comprises a hoisting member, two connecting members, and a containing member disposed in sequence from top to bottom in a vertical direction, and wherein the hoisting member is connected with one end of each of the connecting members, and another end of each of the connecting members is movably connected with the containing member by bolts, so that the containing member is rotatable with respect to the connecting members,
wherein the containing member is provided with a first through-hole and a second through-hole, and each of the connecting members and the containing member are connected at a joint,
wherein a distance between the first through-hole and the joint is less than a distance between the second through-hole and the joint in the vertical direction,
wherein the first through-hole is provided to divide space in the containing member into a first accommodating cavity and a second accommodating cavity, and the second accommodating cavity is used for filling dopants, and the second accommodating cavity is in communication with the second through-hole, and
wherein a blocking member is filled in the containing member, the blocking member is located at the second through-hole, and the blocking member has a size larger than that of the second through-hole, so that the blocking member can block the second through-hole, and the blocking does not leak out of the second through-hole;
controlling positions of the device for supplementary doping of monocrystalline silicon to immerse the containing member filled with dopants in a silicon solution, and
when the silicon solution receives the position of the first through-hole of the device, stopping lowering the device;
pouring the silicon solution into the containing member through the first through-hole;
melting the blocking member; and
guiding the silicon solution with the dopants flowing out of the second through-hole for supplementary doping,
wherein before supplementary doping of the dopants, a power variation is introduced based on a welding power to adjust a temperature of the silicon solution, and a distance between a draft tube in an auxiliary room of a monocrystalline furnace and a surface of the silicon solution is increased by a distance variation on a basis of a position of the draft tube before supplementary doping;
wherein the welding power being a welding power set in a czochralski monocrystalline silicon process before the dopants are doped, the power variation ranging from 10 kw to 30 kw.