US 12,421,609 B2
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Atsuro Seino, Toyama (JP); Takuya Joda, Toyama (JP); and Arito Ogawa, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Jan. 28, 2022, as Appl. No. 17/587,907.
Claims priority of application No. 2021-025294 (JP), filed on Feb. 19, 2021.
Prior Publication US 2022/0267905 A1, Aug. 25, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/4408 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
forming a film containing a first element on the substrate by performing a cycle a predetermined number of times,
wherein the cycle includes performing:
(a) supplying a precursor gas containing the first element and halogen to the substrate;
(b) supplying the precursor gas and a first reducing gas to the substrate, wherein (b) is started simultaneously with an end of (a) and the first reducing gas is silane-based gas or borane-based gas;
(c) supplying the first reducing gas to the substrate, wherein (c) is started simultaneously with an end of (b);
(d) supplying the precursor gas to the substrate, wherein (d) is started simultaneously with an end of (c); and
(e) supplying a second reducing gas to the substrate after (d) is performed, wherein the second reducing gas contains nitrogen and hydrogen; and wherein (d) includes performing: (d1) supplying the precursor gas without supplying the first reducing gas and the second reducing gas.