US 12,421,607 B2
Systems and methods for substrate support temperature control
Zubin Huang, Santa Clara, CA (US); Rui Cheng, San Jose, CA (US); and Jian Li, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 25, 2024, as Appl. No. 18/615,834.
Application 18/615,834 is a division of application No. 17/085,255, filed on Oct. 30, 2020, granted, now 11,981,998.
Claims priority of provisional application 62/930,249, filed on Nov. 4, 2019.
Prior Publication US 2024/0229240 A1, Jul. 11, 2024
Int. Cl. C23C 16/46 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/466 (2013.01) [C23C 16/45563 (2013.01); C23C 16/4581 (2013.01); H01J 37/32724 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor processing chamber comprising:
a semiconductor substrate support having a semiconductor substrate support surface for contacting a substrate and characterized by a central axis through the semiconductor substrate support, a backside surface opposite the semiconductor substrate support surface, and a circumferential edge connecting the semiconductor substrate support surface and the backside surface, the semiconductor substrate support disposed within a processing region of the semiconductor processing chamber;
a shaft about the central axis and hermetically sealed with the backside surface of the semiconductor substrate support;
a purge line disposed concentrically within the shaft and about the central axis, the purge line having a nozzle at a first end fixed at a first distance from the backside surface of the semiconductor substrate support, the nozzle configured to deliver a high thermal conductivity gas to a first portion of the backside surface of the semiconductor substrate support, wherein the first portion is characterized by a first diameter; and
a flow pathway configured to contact the semiconductor substrate support with the high thermal conductivity gas and exhaust the high thermal conductivity gas through the shaft to remove heat.