US 12,421,605 B2
Method for areal selective forming of thin film
Ju Hwan Jeong, Suwon-si (KR); Hyeon Sik Cho, Suwon-si (KR); Han Bin Lee, Suwon-si (KR); Sun Young Baik, Suwon-si (KR); Woong Jin Choi, Suwon-si (KR); Ha Na Kim, Suwon-si (KR); Myeong Il Kim, Suwon-si (KR); and Kyu Ho Cho, Suwon-si (KR)
Assigned to EGTM Co., Ltd., Suwon-si (KR)
Filed by EGTM Co., Ltd., Suwon-si (KR)
Filed on May 3, 2024, as Appl. No. 18/654,700.
Claims priority of application No. 10-2023-0058754 (KR), filed on May 4, 2023.
Prior Publication US 2024/0368762 A1, Nov. 7, 2024
Int. Cl. C23C 16/455 (2006.01); C23C 16/04 (2006.01); C23C 16/44 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/042 (2013.01); C23C 16/4408 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for areal selective forming of a thin film comprising:
a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber;
a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate;
a purge step of purging an inside of the chamber; and
a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film,
wherein the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below:

OG Complex Work Unit Chemistry
wherein, in the Chemical Formula 1, M is any one selected from Group 5 metal elements of niobium (Nb), tantalum (Ta), and vanadium (V), R1, R2, and R3 are each independently selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, and X is each independently a halogen atom.