US 12,421,604 B2
Ultra-shallow dopant and ohmic contact regions by solid state diffusion
Robert D. Clark, Fremont, CA (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 9, 2022, as Appl. No. 17/884,090.
Claims priority of provisional application 63/235,595, filed on Aug. 20, 2021.
Prior Publication US 2023/0058186 A1, Feb. 23, 2023
Int. Cl. C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H10D 62/10 (2025.01); H10D 64/62 (2025.01)
CPC C23C 16/45553 (2013.01) [C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/2254 (2013.01); H01L 21/324 (2013.01); H10D 62/119 (2025.01); H10D 64/62 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
loading the substrate in a processing chamber, the substrate comprising a raised feature of a semiconductor;
forming a conformal dopant layer on the raised feature by atomic layer deposition (ALD);
forming a metal layer over the raised feature;
thermally treating the conformal dopant layer to form an ultra-shallow dopant region in the raised feature by diffusion of a dopant from the conformal dopant layer into the raised feature; and
thermally treating the metal layer to form an ohmic contact region in the raised feature by diffusion of a metal from the metal layer into the raised feature, wherein the conformal dopant layer comprises an oxide containing the dopant, a nitride containing the dopant, or an oxynitride containing the dopant and the ohmic contact region comprises a metal silicide.