US 12,421,603 B2
Composition for high temperature atomic layer deposition of high quality silicon oxide thin films
Meiliang Wang, Tempe, AZ (US); Xinjian Lei, Vista, CA (US); and Madhukar B. Rao, Carlsbad, CA (US)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Appl. No. 17/282,604
Filed by VERSUM MATERIALS US, LLC, Tempe, AZ (US)
PCT Filed Oct. 3, 2019, PCT No. PCT/US2019/054488
§ 371(c)(1), (2) Date Apr. 2, 2021,
PCT Pub. No. WO2020/072768, PCT Pub. Date Apr. 9, 2020.
Claims priority of provisional application 62/741,126, filed on Oct. 4, 2018.
Prior Publication US 2021/0363639 A1, Nov. 25, 2021
Int. Cl. C23C 16/40 (2006.01); C01B 33/113 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45553 (2013.01) [C01B 33/113 (2013.01); C23C 16/402 (2013.01); C23C 16/4408 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); C01P 2006/40 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A process for depositing a silicon oxide film onto a substrate comprising the steps of:
a. providing a substrate in a reactor;
b. introducing into the reactor at least one silicon precursor wherein the at least one silicon precursor has a structure represented by Formula I:
R1R2mSi(NR3R4)n  (I),
wherein R1, R2, and R3 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group;
R4 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a Ce to C10 aryl group, and a C3 to C10 alkylsilyl group;
m is 0 to 2; and
n is 1 to 3, wherein m+n=3;
and wherein the silicon precursor includes 5 ppm or less of chloride ions as measured by IC and is substantially free of one or more impurities selected from the group consisting of other halides, metals, and combinations thereof;
c. purging the reactor with purge gas;
d. introducing an oxygen source into the reactor; and
e. purging the reactor with purge gas,
wherein steps b through e are repeated until a desired thickness of silicon oxide is deposited, and wherein the process in conducted at one or more temperatures ranging from 700 to 720° C. and one or more pressures ranging from 50 miliTorr (mT) to 760 Torr.