US 12,421,424 B2
Slurry composition and method of manufacturing integrated circuit device by using the same
Wooin Lee, Hwaseong-si (KR); Jihye Kim, Anseong-si (KR); Seungho Park, Seoul (KR); Jaewoo Lee, Anseong-si (KR); Jaeik Lee, Anseong-si (KR); Jaehak Lee, Anseong-si (KR); Bohyeok Choi, Anseong-si (KR); Jungeun Kang, Seoul (KR); Boyun Kim, Hwaseong-si (KR); Sangkyun Kim, Hwaseong-si (KR); and Hyukmin Kim, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.; and KCTECH CO., LTD.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 18, 2023, as Appl. No. 18/098,244.
Claims priority of application No. 10-2022-0010693 (KR), filed on Jan. 25, 2022.
Prior Publication US 2023/0257630 A1, Aug. 17, 2023
Int. Cl. C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H10B 12/00 (2023.01)
CPC C09G 1/02 (2013.01) [C09K 3/1409 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H10B 12/05 (2023.02); H10B 12/482 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A method of manufacturing an integrated circuit device, the method comprising:
forming, on a substrate, a target structure including a first polishing target film and a second polishing target film, which are different materials from each other;
applying, onto the target structure, a slurry composition including:
polishing particles,
a first inhibitor, which includes a nonionic polymer that selectively binds to the first polishing target film, and
a second inhibitor, which includes an anionic polymer that selectively binds to the second polishing target film; and
forming a planarized target structure using a chemical mechanical polishing (CMP) process while the slurry composition is applied onto the target structure.