US 12,421,119 B2
Enhanced graphene structure based on weak coupling, graphene film, and photoelectric device
Chao Gao, Hangzhou (CN); Li Peng, Hangzhou (CN); Lingfei Li, Hangzhou (CN); Wenzhang Fang, Hangzhou (CN); and Yingjun Liu, Hangzhou (CN)
Assigned to ZHEJIANG UNIVERSITY, Hangzhou (CN)
Filed by ZHEJIANG UNIVERSITY, Hangzhou (CN)
Filed on Mar. 17, 2022, as Appl. No. 17/696,899.
Application 17/696,899 is a continuation of application No. PCT/CN2020/141339, filed on Dec. 30, 2020.
Prior Publication US 2022/0204348 A1, Jun. 30, 2022
Int. Cl. C01B 32/186 (2017.01); H10F 30/227 (2025.01); H10F 77/122 (2025.01)
CPC C01B 32/186 (2017.08) [H10F 77/122 (2025.01); C01B 2204/22 (2013.01); C01P 2002/01 (2013.01); C01P 2002/70 (2013.01); H10F 30/227 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A graphene photoelectric device, comprising a graphene film and a semiconductor substrate, wherein the graphene film is spread on the semiconductor substrate; and
wherein the graphene film comprises a graphene structure comprising a plurality of graphene units stacked vertically; each graphene unit consists of two or more graphene sheets stacked in AB form; electron cloud between two vertically adjacent graphene units achieves an incomplete coupling effect, to promote hot electron transition and increase joint density of states, thereby increasing number of hot electrons in high-energy states; stacking direction of the graphene units in the graphene structure is in thickness direction of the graphene film; and the graphene film enhances accumulation of hot electrons in high-energy states by the graphene structure.