US 12,096,543 B2
Method for using radiation source apparatus
Chiao-Hua Cheng, Tainan (TW); Hsin-Feng Chen, Yilan (TW); Yu-Fa Lo, Kaohsiung (TW); Yu-Kuang Sun, Hsinchu (TW); Wei-Shin Cheng, Hsinchu (TW); Yu-Huan Chen, Hsinchu (TW); Ming-Hsun Tsai, Hsinchu (TW); Cheng-Hao Lai, Taichung (TW); Cheng-Hsuan Wu, New Taipei (TW); Shang-Chieh Chien, New Taipei (TW); Heng-Hsin Liu, New Taipei (TW); Li-Jui Chen, Hsinchu (TW); and Sheng-Kang Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 9, 2023, as Appl. No. 18/151,930.
Application 18/151,930 is a continuation of application No. 17/369,740, filed on Jul. 7, 2021, granted, now 11,553,581.
Claims priority of provisional application 63/163,433, filed on Mar. 19, 2021.
Prior Publication US 2023/0164901 A1, May 25, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H05G 2/00 (2006.01); G03F 7/00 (2006.01)
CPC H05G 2/006 (2013.01) [G03F 7/70033 (2013.01); G03F 7/7055 (2013.01); H05G 2/008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
performing a lithography process using an extreme ultraviolet (EUV) radiation source;
after the lithography process, inserting an extraction tube into a vessel of the EUV radiation source; and
cleaning a collector of the EUV radiation source by using the extraction tube.