US 12,096,148 B2
Image sensor device and operation method thereof
Jinyoung Jeong, Suwon-si (KR); Jewon Lee, Suwon-si (KR); and Seokyong Hong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 21, 2022, as Appl. No. 17/970,986.
Claims priority of application No. 10-2021-0160732 (KR), filed on Nov. 19, 2021; and application No. 10-2022-0094259 (KR), filed on Jul. 28, 2022.
Prior Publication US 2023/0041316 A1, Feb. 9, 2023
Int. Cl. H04N 25/772 (2023.01); H04N 25/709 (2023.01)
CPC H04N 25/772 (2023.01) [H04N 25/709 (2023.01)] 18 Claims
OG exemplary drawing
 
1. An image sensor device comprising:
a first image pixel connected to a first data line;
a second image pixel connected to the first data line;
an analog-to-digital converter configured to generate a digital signal based on a ramp signal and a voltage level of the first data line; and
a clamp signal generator configured to generate a clamp signal depending on an analog gain of the analog-to-digital converter,
wherein, while a data voltage is provided from the first image pixel to the first data line, the second image pixel provides a clamp voltage to the first data line based on the clamp signal, and while the data voltage is provided from the first image pixel to the first data line, a first select transistor of the first image pixel operates in a triode region, and a second select transistor of the second image pixel operates in a saturation region.