CPC H03M 13/1177 (2013.01) [H03M 13/1575 (2013.01); H03M 13/159 (2013.01); G06F 17/16 (2013.01); G11C 29/52 (2013.01); H03M 13/05 (2013.01); H03M 13/116 (2013.01); H03M 13/255 (2013.01); H03M 13/2906 (2013.01); H03M 13/616 (2013.01)] | 14 Claims |
1. A memory, comprising:
a first check matrix calculation circuit suitable for generating a first parity from a group indicator portion of a check matrix including stored write data, wherein the stored write data includes N data groups each of which is input through a different data pad, and the group indicator portion distinguishes the N data groups, where N is a positive integer;
a memory core suitable for storing the stored write data and the first parity;
a first syndrome calculation circuit suitable for generating a first syndrome by adding the first parity which is read from the memory core to a first calculation result obtained by calculating a product of the group indicator portion of the check matrix including the stored write data and read data which is read from the memory core; and
a failure determination circuit suitable for accumulating the first syndrome for a region of the memory core to generate a vector, determining a presence of a failure of the region based on the vector, correcting the failure to thereby correct the read data read from the memory core, and transferring the corrected read data from the memory core.
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