US 12,094,988 B1
P-type CZT radiation detector for high flux applications
James Balcom, North Saanich (CA); Jason MacKenzie, Victoria (CA); Francis Joseph Kumar, Victoria (CA); Krzysztof Iniewski, Port Moody (CA); Michael K. Jackson, Victoria (CA); and Yuxin Song, Saanichton (CA)
Assigned to REDLEN TECHNOLOGIES, INC., Saanichton (CA)
Filed by REDLEN TECHNOLOGIES, INC., Saanichton (CA)
Filed on Jun. 21, 2022, as Appl. No. 17/807,957.
Claims priority of provisional application 63/213,979, filed on Jun. 23, 2021.
Int. Cl. H01L 31/0272 (2006.01); H01L 31/0288 (2006.01); H01L 31/08 (2006.01); H01L 31/109 (2006.01)
CPC H01L 31/0272 (2013.01) [H01L 31/0288 (2013.01); H01L 31/085 (2013.01); H01L 31/109 (2013.01)] 14 Claims
 
1. An ionizing radiation detector, comprising:
a p-type semiconductor single crystal substrate comprising first and second major planar opposing surfaces, wherein the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and wherein a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate;
a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate; and
a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate,
wherein:
the p-type semiconductor single crystal substrate is doped with the n-type dopant atoms at a concentration between 0.1 parts per million (ppm) and 20 parts per million (ppm);
the p-type semiconductor single crystal substrate comprises a II-VI semiconductor material;
the II-VI semiconductor material comprises cadmium zinc telluride (CZT) comprising 6-14 at. % of zinc;
the n-type dopant atoms comprise indium atoms, and resistivity of the p-type semiconductor single crystal substrate ranges from 5×108 to 5×1010 Ohm-cm;
the concentration of deep level acceptor defects in the p-type semiconductor single crystal substrate is greater than a concentration of extrinsic and intrinsic donor defects in the p-type semiconductor single crystal substrate;
the deep level acceptor defects comprise at least one of single ionized cadmium vacancies (VCd−), double ionized cadmium vacancies (VCd−−) or indium associate cadmium complexes (VCd−−—InCd+);
the extrinsic donor defects comprise the n-type dopant atoms; and
the intrinsic donor defects comprise at least one of single or double ionized tellurium anti-site defects (TeCd+, TeCd++), tellurium interstitial defects (Tei+), single or double ionized cadmium interstitial defects (Cdi+, Cdi++), or single or double ionized tellurium vacancy defects (VTe+, VTe++).