US 12,094,979 B2
Method for manufacturing semiconductor device
Shunpei Yamazaki, Tokyo (JP); Yasuhiro Jinbo, Kanagawa (JP); Jun Ishikawa, Kanagawa (JP); Sachiaki Tezuka, Kanagawa (JP); and Tetsuya Kakehata, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Appl. No. 17/285,401
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Oct. 17, 2019, PCT No. PCT/IB2019/058842
§ 371(c)(1), (2) Date Apr. 14, 2021,
PCT Pub. No. WO2020/084406, PCT Pub. Date Apr. 30, 2020.
Claims priority of application No. 2018-201928 (JP), filed on Oct. 26, 2018; and application No. 2018-201930 (JP), filed on Oct. 26, 2018.
Prior Publication US 2021/0399134 A1, Dec. 23, 2021
Int. Cl. H01L 29/00 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/76826 (2013.01); H01L 29/66742 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device comprising first and second conductors, first to sixth insulators, and a first oxide, the method comprising:
forming the first insulator over a substrate;
forming the first conductor over the first insulator;
forming the second insulator over the first conductor;
forming the third insulator over the second insulator;
forming the first oxide over the third insulator;
forming the fourth insulator over the first oxide;
forming a first opening reaching the first oxide in the fourth insulator;
forming a first conductive film in the first opening;
removing part of the first conductive film until a top surface of the fourth insulator is exposed to form the second conductor from the first conductive film;
forming the fifth insulator in contact with the fourth insulator and the second conductor;
removing part of the fifth insulator, part of the fourth insulator, part of the third insulator, and part of the second insulator to form a second opening reaching the first insulator; and
forming the sixth insulator covering the fifth insulator, the fourth insulator, the third insulator, and the second insulator and in contact with the first insulator in the second opening,
wherein the third insulator and the fourth insulator are deposited using a gas containing a molecule including a silicon atom, and
wherein the molecule including a silicon atom contains three or less hydrogen atoms per silicon atom.