US 12,094,924 B2
Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same
Kyoo Ho Jung, Seoul (KR); Sang Yeol Kang, Yongin-si (KR); Su Hwan Kim, Seoul (KR); Dong Kwan Baek, Seoul (KR); Yu Kyung Shin, Hwaseong-si (KR); and Won Sik Choi, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 3, 2022, as Appl. No. 17/567,316.
Claims priority of application No. 10-2021-0088511 (KR), filed on Jul. 6, 2021.
Prior Publication US 2023/0008127 A1, Jan. 12, 2023
Int. Cl. G11C 11/402 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC H01L 28/65 (2013.01) [G11C 11/4023 (2013.01); H10B 12/30 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A capacitor structure comprising:
a lower electrode;
an upper electrode; and
a capacitor dielectric film between the lower electrode and the upper electrode,
wherein the lower electrode includes an electrode film including a first metal element, and the lower electrode includes a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film,
the doping oxide film further includes a second metal element including an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf), and the doping oxide film includes at least one of Group 5 to Group 11 or Group 15 metal elements,
the lower electrode further includes a metal oxide film including an oxide of the first metal element and not including the second metal element,
the metal oxide film is between the electrode film and the doping oxide film,
the metal oxide film has a first thickness, and
the doping oxide film has a second thickness that is larger than the first thickness.