US 12,094,906 B2
CMOS image sensors
Jung Bin Yun, Hwaseong-si (KR); Kyungho Lee, Suwon-si (KR); and Sung-Ho Choi, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 27, 2022, as Appl. No. 17/826,708.
Application 17/826,708 is a continuation of application No. 16/775,519, filed on Jan. 29, 2020, granted, now 11,348,959, issued on May 31, 2022.
Application 16/775,519 is a continuation of application No. 15/405,451, filed on Jan. 13, 2017, granted, now 10,608,032, issued on Mar. 31, 2020.
Claims priority of application No. 10-2016-0005546 (KR), filed on Jan. 15, 2016.
Prior Publication US 2022/0293645 A1, Sep. 15, 2022
Int. Cl. H01L 27/14 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/1461 (2013.01); H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a substrate including a first pixel region and a second pixel region adjacent to the first pixel region in a first direction;
a pixel separation trench in the substrate;
first to fourth photoelectric conversion devices in the substrate on the first pixel region;
fifth to eighth photoelectric conversion devices in the substrate on the second pixel region;
a first floating diffusion region disposed in common between the first to fourth photoelectric conversion devices;
a second floating diffusion region disposed in common between the fifth to eighth photoelectric conversion devices;
a first micro-lens disposed on the first and second photoelectric conversion devices;
a source follower gate;
a selection gate; and
a reset gate,
wherein the source follower gate, the selection gate, and the reset gate are arranged in the first direction on the substrate,
wherein the source follower gate is electrically connected to the first and second floating diffusion regions and overlaps at least one of the first to fourth photoelectric conversion devices of the first pixel region and at least one of the fifth to eighth photoelectric conversion devices of the second pixel region in a direction orthogonal to the first direction, and
wherein the first to eight photoleectric conversion devices is separated from each other by the pixel separation trench.
 
11. An image sensor, comprising:
a substrate including a first pixel region and a second pixel region adjacent to the first pixel region in a first direction;
a pixel separation trench in the substrate;
first to fourth photoelectric conversion regions disposed in the substrate and provided in the first pixel region;
fifth to eighth photoelectric conversion regions disposed in the substrate and provided in the second pixel region;
a first micro-lens disposed on the first and second photoelectric conversion regions;
a source follower gate;
a selection gate;
a reset gate,
wherein the source follower gate, the selection gate, and the reset gate are arranged in the first direction on the substrate, and
wherein the source follower gate is electrically connected to first and second floating diffusion regions and overlaps at least one of the first to fourth photoelectric conversion devices of the first pixel region and at least one of the fifth to eighth photoelectric conversion devices of the second pixel region in a direction orthogonal to the first direction, and
wherein the first to eight photoelectric conversion devices are separated from each other by the pixel separation trench.
 
17. An image sensor, comprising:
a substrate including a first pixel region and a second pixel region adjacent to the first pixel region in a first direction;
a pixel separation trench in the substrate;
first to fourth photoelectric conversion devices in the substrate on the first pixel region;
a first floating diffusion region disposed in common between the first to fourth photoelectric conversion devices;
a first micro-lens disposed on the first and second photoelectric conversion devices;
a source follower gate;
a selection gate; and
a reset gate,
wherein the source follower gate, the selection gate, and the reset gate are arranged in the first direction on the substrate,
wherein the source follower gate overlaps at least one of the first to fourth photoelectric conversion devices of the first pixel region and the second pixel region in a second direction orthogonal to the first
direction, and
wherein the first to eight photoelectric conversion devices are separated from each other by the pixel separation trench.