US 12,094,896 B2
Photosensitive semiconductor device including heterojunction photodiode
Zhaoyao Zhan, Singapore (SG); Qianwei Ding, Singapore (SG); Xiaohong Jiang, Singapore (SG); and Ching Hwa Tey, Singapore (SG)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Nov. 10, 2022, as Appl. No. 17/984,261.
Application 17/984,261 is a continuation of application No. 16/931,400, filed on Jul. 16, 2020, granted, now 11,527,561.
Claims priority of application No. 202010503994.4 (CN), filed on Jun. 5, 2020.
Prior Publication US 2023/0076390 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1461 (2013.01) [H01L 27/14623 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A photosensitive device, comprising:
an integrated circuit structure;
a first pad and a second pad exposed from a surface of the integrated circuit structure;
a first material layer disposed on the surface of the integrated circuit structure and covering the first pad; and
a second material layer disposed on the first material layer and covering the second pad, wherein the first material layer and the second material layer form a heterojunction photodiode.