US 12,094,874 B2
Semiconductor devices and methods of manufacturing thereof
Sung-Hsin Yang, Hsinchu (TW); Jung-Chi Jeng, Tainan (TW); and Ru-Shang Hsiao, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 28, 2021, as Appl. No. 17/460,200.
Prior Publication US 2023/0067587 A1, Mar. 2, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 27/0688 (2013.01) [H01L 21/82385 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/092 (2013.01); H01L 29/401 (2013.01); H01L 29/42356 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a first three-dimensional semiconductor structure of a first conductivity type protruding from a surface of the semiconductor substrate;
a second three-dimensional semiconductor structure of a second conductivity type protruding from the surface of the semiconductor substrate; and
a first transistor having:
a first source/drain structure formed in the first three-dimensional semiconductor structure;
a second source/drain structure formed in the second three-dimensional semiconductor structure;
a first gate structure straddling a first portion of the first three-dimensional semiconductor structure and a first portion of the second three-dimensional semiconductor structure; and
a second gate structure straddling a second portion of the second three-dimensional semiconductor structure.