US 12,094,869 B2
Diode structures of stacked devices and methods of forming the same
Byounghak Hong, Albany, NY (US); Seungchan Yun, Waterford, NY (US); and Kang-ill Seo, Albany, NY (US)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 7, 2023, as Appl. No. 18/366,010.
Application 18/366,010 is a continuation of application No. 17/554,171, filed on Dec. 17, 2021, granted, now 11,764,207.
Claims priority of provisional application 63/246,965, filed on Sep. 22, 2021.
Prior Publication US 2023/0378164 A1, Nov. 23, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/07 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01)
CPC H01L 27/0255 (2013.01) [H01L 21/823807 (2013.01); H01L 21/823885 (2013.01); H01L 27/0727 (2013.01); H01L 29/7391 (2013.01); H01L 29/861 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a substrate; and
a diode structure comprising:
an upper semiconductor layer on the substrate, wherein the upper semiconductor layer is spaced apart from the substrate in a vertical direction;
an upper thin semiconductor layer protruding from a side surface of the upper semiconductor layer in a horizontal direction;
a lower semiconductor layer that is between the substrate and the upper semiconductor layer and has a first conductivity type;
a lower thin semiconductor layer protruding from a side surface of the lower semiconductor layer in the horizontal direction;
a first diode contact; and
a second diode contact,
wherein the second diode contact is in contact with a first portion of the substrate, and the first portion of the substrate has a second conductivity type different from the first conductivity type, and
the first diode contact is in contact with the lower semiconductor layer or a second portion of the substrate.