US 12,094,821 B2
Methods for forming semiconductor structures
Chia-Hsin Huang, Taichung (TW)
Assigned to WINBOND ELECTRONICS CORP., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Sep. 14, 2023, as Appl. No. 18/467,482.
Application 18/467,482 is a division of application No. 17/214,467, filed on Mar. 26, 2021, granted, now 11,791,261.
Claims priority of application No. 109112504 (TW), filed on Apr. 14, 2020.
Prior Publication US 2023/0420365 A1, Dec. 28, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 21/32134 (2013.01); H01L 21/76804 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 29/41725 (2013.01); H01L 29/401 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for forming semiconductor device, comprising:
forming a dielectric layer on a substrate;
forming a contact in the dielectric layer, wherein the step of forming the contact comprises:
forming a contact hole in the dielectric layer;
conformally depositing a liner in the contact hole;
depositing a conductive material in the contact hole and on the dielectric layer; and
removing the conductive material outside the contact hole, while leaving the conductive material in the contact hole to serve as the contact;
recessing the dielectric layer, so that an upper portion of the contact protrudes from an upper surface of the dielectric layer; and
etching the upper portion of the contact to reduce a size of the upper portion of the contact.