US 12,094,799 B2
Method of making a semiconductor device having a thermal contact
Jian Wu, Hsinchu (TW); Feng Han, Hsinchu (TW); and Shuai Zhang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC CHINA COMPANY, LIMITED, Shanghai (CN)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC CHINA COMPANY, LIMITED, Shanghai (CN)
Filed on Aug. 10, 2022, as Appl. No. 17/818,782.
Application 17/818,782 is a continuation of application No. 17/122,749, filed on Dec. 15, 2020, granted, now 11,862,527.
Claims priority of application No. 202011306929.9 (CN), filed on Nov. 20, 2020.
Prior Publication US 2022/0384296 A1, Dec. 1, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/36 (2006.01); H01L 27/12 (2006.01)
CPC H01L 23/36 (2013.01) [H01L 21/4871 (2013.01); H01L 21/4875 (2013.01); H01L 27/1203 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming an oxide layer over a top surface of a substrate;
depositing a layer of semiconductor material over the oxide layer; and
manufacturing a thermal substrate contact extending through the layer of semiconductor material and the oxide layer to the top surface of the substrate, wherein manufacturing the thermal substrate contact comprises:
etching a recess, wherein the etching exposes a top-most surface of the substrate;
filling the recess with a thermally conductive material, wherein the thermally
conductive material lands on the top-most surface of the substrate;
manufacturing a transistor having, in the layer of semiconductor material, an N-well, a P-well, and a channel; and
manufacturing an interconnect structure over the thermal substrate contact, wherein the thermal substrate contact is electrically connected to the interconnect structure,
wherein etching the recess comprises:
etching a first opening through the layer of semiconductor material to expose the oxide layer; and
etching a second opening through the first opening to expose the substrate, wherein etching the second opening is a different process from etching the first opening,
wherein filling the recess comprises:
depositing the thermally conductive material into the first opening; and
depositing the thermally conductive material into the second opening.